Product Introduction:
By integrating highly luminescent quantum dots into a photosensitive matrix, quantum dot (QD) photoresist enables precise photolithographic patterning of color conversion layers. Compared with conventional coating or printing methods, QD photoresists provide greater pattern accuracy and process compatibility, making them particularly suitable for high-resolution optoelectronic applications.
QD photoresists are typically formulated from multiple carefully engineered components to ensure both optical performance and photolithographic processability. The system generally contains surface-modified quantum dots that serve as the light-emitting core, polymer resins that form the structural matrix, suitable solvents to control viscosity and coating behavior, photoinitiators that trigger crosslinking under ultraviolet exposure, and functional additives that optimize film stability and processing performance. Through specialized surface treatment, the quantum dots achieve improved compatibility with the polymer network, enabling uniform dispersion and stable optical properties within the photoresist film.
The QD photoresist is engineered to withstand standard photolithography processes, including UV exposure, alkaline development, and other fabrication steps, ensuring reliable pattern formation during device manufacturing.
The QD photoresist supports fine pattern definition through photolithography, enabling the fabrication of high-resolution quantum dot color conversion layers required for advanced display technologies.
The optimized formulation enables the formation of smooth, uniform films with minimal defects, which is essential for achieving stable and consistent device performance.
A high concentration of quantum dots can be incorporated while maintaining good dispersion within the polymer matrix, resulting in efficient color conversion and bright emission performance.
These QD photoresists are widely used for fabricating patterned quantum dot color conversion layers in advanced display technologies. They are suitable for applications in quantum dot organic light-emitting diode (QD-OLED) displays, quantum dot micro light-emitting diode (QD-mLED) displays, and quantum dot color filter liquid crystal displays (QDCF-LCD), where they efficiently convert blue or ultraviolet light into pure red and green emission. By enabling high-resolution patterning and precise color control, these materials help achieve displays with enhanced color gamut, improved brightness, and greater energy efficiency.
| Item | Parameter |
| QD Composition | CdSe/ZnCdSeS/ZnS, with Special Surface Treatment |
| Appearance | Red or green liquid |
| Viscosity | ~10 cPs |
| QD Content in Dry Photoresist Film | ~45% |
| Development Resolution (3 µm Film Thickness, Stepper Exposure) | ~3 µm |
| Catalog Number | PL Emission | FWHM | Abs | CCE | EQE |
| NM-QD0327 | 535±2 nm | ≤28 nm | 90% | 50% | 45% |
| NM-QD0328 | 620±2 nm | ≤28 nm | 90% | 50% | 45% |
Note: The blue light absorption rate (Abs), color conversion efficiency (CCE), and external quantum efficiency (EQE) are measured based on a film thickness of 3 µm.
For researchers and manufacturers seeking reliable materials for next-generation display technologies, Alfa Chemistry is your best choice. We not only provide high-quality QD photoresists with stable performance, high patterning precision, and excellent color conversion efficiency, but also offer a variety of customizable solutions to meet different device structures and process requirements. By choosing Alfa Chemistry, customers can obtain dependable materials and professional technical support to accelerate the development and production of advanced display devices.
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